tailieunhanh - The atomic and electronic structure of Hf0.5Zr0.5O2 and Hf0.5Zr0.5O2:La films

The bombardment with argon ions of the studied films leads to oxygen vacancy generation in the near-surface layer. The oxygen vacancy concentrations in the bombarded films were evaluated from the comparison of experimental valence band photoelectron spectra with the theoretical ones calculated using the density functional theory. |

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