Đang chuẩn bị liên kết để tải về tài liệu:
Ultra Wideband Boris LembrikovSCIYO Part 8

Tham khảo tài liệu 'ultra wideband boris lembrikovsciyo part 8', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 204 Ultra Wideband 1.12.3.1 Comparisons The circuit in Figure 40 is simulated in a 0.18pm CMOS technology with a power supply of 1.8V. The complete VCO with the values of its elements is shown in Figure 48. The total power is 29.1mW with dc current of 2mA in active inductor and 17mA in the main core of oscillator. Tuning range of 3.8GHz- 7.4GHz is achieved by varying Vtune from 1V to 2.5V as shown in Figure 49. Maximum quality factor of active inductor is acquired at 3.8GHz with 0.55nH inductance. At 1MHz frequency offset phase noise varies from -92.05dBc Hz to -70dBc Hz. Fig. 48. The final circuit used for simulation Ultra wideband oscillators 205 Fig. 49. Frequency variation with Vtune Comparison of the accuracy between frequencies computed from 43 and those obtained from simulation are shown in Figure 50. Vtune can be increased until the parallel NMOS in active resistor switches on. As a result the active inductor can be tuned from 0.34nH to 0.61nH as depicted in Figure 51. Fig. 50. a simulation results b frequencies derived from equation 43