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Crystalline Silicon Properties and Uses Part 10

Tham khảo tài liệu 'crystalline silicon properties and uses part 10', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 214 Crystalline Silicon - Properties and Uses lead to an increase in the red spectral region. The ultraviolet UV and violet V luminescence are detected in mostly all ion implanted samples at around 290 nm and 410 nm respectively indicating not only extrinsic related ODC or extrinsic defects but also ion implantation induced defects in the SiO2 matrix. As a surprising peculiarity the cathodoluminescence spectra of oxygen and sulfur implanted SiO2 layers show besides characteristic bands a sharp and intensive multimodal structure beginning in the green region at 500 nm over the yellow-red region and extending to the near IR measured up to 820 nm. The energy step differences of the sublevels amount to an average of 120 meV and indicate vibronic-electronic transitions probably of O 2 interstitial molecules as we could demonstrate by a respective configuration coordinate model. However such mysterious multimodal luminescence spectra are observed occasionally in other material compounds too and are many-fold in their interpretations by other authors ranging from photonic crystals and interference effects over discrete quantum dots and respective quantum confinement even to our model of interstitial molecules and their electronic-vibronic luminescent transitions. 7. References Anedda A. Carbonaro C. M. Serpi A. Chiodini N. Paleari A. Scotti R. Spinolo G. Brambilla G. and Pruneri V. Vacuum ultraviolet absorption spectrum of photorefractive Sn-doped silica fiber preforms J. Non-Cryst. Solids 280 2001 287. Anedda A. Carbonaro C. M. Clemente F. Corpino R. Grandi S. Mustarelli P. and Magistris A. OH-dependence of ultraviolet emission in porous silica J. Non-Cryst. Solids 322 2003b 68. Bailey R. C. Parpia M. Hupp J. T. Sensing via optical interference Materialstoday Vol 8 Iss.4 April 2005 46. Bakaleinikov L. A. Zamoryanskaya M. V. Kolesnikova E. V. Sokolov V. I. and Flegontova E. Yu. Silicon Dioxide Modification by an Electron Beam Physics of the Solid State 46 2004 1018. Bakos