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Báo cáo hóa học: " Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN/GaN Triangle-Shaped Potential Quantum Well | Nanoscale Res Lett 2009 4 1315-1318 DOI 10.1007 s11671-009-9398-3 NANO EXPRESS Binding Energy and Spin-Orbit Splitting of a Hydrogenic Donor Impurity in AlGaN GaN Triangle-Shaped Potential Quantum Well Jun Wang Shu-Shen Li Yan-Wu Lii Xiang-Lin Liu Shao-Yan Yang Qin-Sheng Zhu Zhan-Guo Wang Received 30 March 2009 Accepted 11 July 2009 Published online 28 July 2009 to the authors 2009 Abstract In the framework of effective-mass envelope function theory including the effect of Rashba spin-orbit coupling the binding energy Eb and spin-orbit split energy r of the ground state of a hydrogenic donor impurity in AlGaN GaN triangle-shaped potential heterointerface are calculated. We find that with the electric field of the heterojunction increasing 1 the effective width of quantum well W decreases and 2 the binding energy increases monotonously and in the mean time 3 the spin-orbit split energy r decreases drastically. 4 The maximum of r is 1.22 meV when the electric field of heterointerface is 1 MV cm. Keywords Binding energy Spin-orbit splitting Hydrogenic donor impurity AlGaN GaN J. Wang El X.-L. Liu S.-Y. Yang Q.-S. Zhu Z.-G. Wang Key Laboratory of Semiconductor Materials Science Institute of Semiconductors Chinese Academy of Sciences P. O. Box 912 100083 Beijing People s Republic of China e-mail junwang07@semi.ac.cn X. -L. Liu e-mail xlliu@semi.ac.cn Q.-S. Zhu e-mail qszhu@semi.ac.cn S.-S. Li State Key Laboratory for Superlattices and Microstructures Institute of Semiconductrors Chinese Academy of Sciences P.O. Box 912 100083 Beijing People s Republic of China Y. -W. Lu Department of Physics Beijing Jiaotong University 100044 Beijing People s Republic of China Introduction GaN AlN and their related compounds as wide gap semiconductors attracted a lot of interest in the past few yeas mainly due to their good optical properties and great potential uses in optoelectronics. Spin-orbit coupling is the key issue of semiconductor spintronics 1-3 . Since there is a large .