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báo cáo hóa học:" Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMT"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Electrical characterization and nanoscale surface morphology of optimized Ti/Al/Ta/Au ohmic contacts for AlGaN/GaN HEMT | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Electrical characterization and nanoscale surface morphology of optimized Ti Al Ta Au ohmic contacts for AlGaN GaN HEMT Nanoscale Research Letters 2012 7 107 doi 10.1186 1556-276X-7-107 Cong Wang kevinhunter0414@hotmail.com Nam-Young Kim nykim@kw.ac.kr ISSN 1556-276X Article type Nano Express Submission date 22 July 2011 Acceptance date 7 February 2012 Publication date 7 February 2012 Article URL http www.nanoscalereslett.com content 7 1 107 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http www.nanoscalereslett.com authors instructions For information about other SpringerOpen publications go to http www.springeropen.com 2012 Wang and Kim licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http creativecommons.org licenses by 2.0 which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Electrical characterization and nanoscale surface morphology of optimized Ti Al Ta Au ohmic contact for AlGaN GaN HEMT Cong Wang1 and Nam-Young Kim 1 1RFIC Centre Kwangwoon University 617-2 Bima-Kwan 26 Kwangwon-Gil Nowon-Ku Seoul South Korea Corresponding author nykim@kw.ac.kr Email addresses CW kevinhunter0414@hotmail.com N-YK nykim@kw.ac.kr Abstract Good ohmic contacts with low contact resistance smooth surface morphology and a well-defined edge profile are essential to ensure optimal device performances for the AlGaN GaN high electron mobility transistors HEMTs .