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analog bicmos design practices and pitfalls phần 2

và các tiêu chuẩn về quản lý xác định cắn nhãn hiệu, và thiên tai quần chúng. Có tăng nhấn mạnh và nâng cao nhận thức về vai trò của nha khoa của bạo lực gia đình (lạm dụng trẻ em, vợ, chồng và người cao tuổi). Nổi tiếng và nổi tiếng số liệu xác định thông qua pháp y nha khoa: John Wilkes Booth, | where A is the cross-sectional area of the junction. Since Xd the width of the depletion region is a function of voltage the junction capacitance is also a function of voltage. Plugging Equation 1.24 into Equation 1.27 Cj Cj 0 - 1.28 where _ Cj0 Aựw 1.29 Equations 1.29 and 1.27 apply to the single-sided junction with uniform doping in the p-sides and n-sides. If the doping varies linearly with distance junction capacitance varies inversely as the cube root of applied voltage. 1.3.3 The Law of the Junction The law of the junction is used to calculate electron and hole densities in pn junctions. It is based on Boltzmann statistics. Consider two sets of energy states. They are identical except that set 1 at energy level E1 is occupied by N1 electrons and set 2 at energy level E2 is occupied by N2 electrons. The Boltzmann assumption is that N e- 1.30 N1 In a pn junction the built-in potential T across the junction causes an energy difference. The conduction band edge on the p-side of the junction is at a higher energy than the conduction band on the n-side of the junction. On the n-side of the junction outside the depletion region the density of electrons is ND the donor concentration. On the p-side of the junction outside the depletion region the density of electrons in the conduction band is v 1 NA. Conduction band states in the n-side are occupied but conduction band states in the p-side tend to be unoccupied. Boltzmann s Equation 1.30 can be used to find the relationship between the densities of conduction electrons on the n-sides and p-sides of the junction and the junction built-in potential. Let N1 equal the density of conduction electrons on the p-side of the junction and N2 equal the density of electrons on the n-side of the junction. Then using Equation 1.30 N -XnE e -V N1 NaND r 2 2 n o Vtln n - _1Nand where VT KT q is the thermal voltage. And since potential voltage is energy per unit charge and the charge involved is -q the charge of an electron Ỷo the