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The resistive switching characteristics and electrical conduction mechanisms of memory devices based on nanocomposite

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The resistive switching effect was observed with the ON/OFF ratio of 0.5 102 , high endurance, excellent retention and the electrical transport mechanisms were followed by the SCLC and Ohmic’s law in the low resistance state and FlowerNordheim tunneling in the high resistance state. The resistive switching mechanism was contributed by the oxygen vacancies in ZnO nanoparticles and the oxygen ions in the bottom electrode. |

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