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Device performance of poly-Si thin film transistors fabricated on YSZ crystallization induction layer via a two step irradiation method using pulsed laser

In this study, we fabricated and investigated device performance of poly-Si thin-film transistors (TFTs) via a two-step pulsed-laser annealing (PLA) method on two kinds of substrates namely glass and YSZ*/glass. It was found that TFTs on YSZ/glass exhibited much better performance and uniformity among devices, e.g., they showed an average mobility of ~80 cm2 /Vs and standard deviation of ~18 cm2 /Vs, respectively, compared with ~40 cm2 /Vs and ~28 cm2 /Vs of TFTs on glass substrates, respectively. |