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Some physical results of single electron transitor

Single electron transistor (SET) is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size, low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect, Coulomb blockage, Quantum dot, Coulomb staircase, and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated. | SCIENCE TECHNOLOGY DEVELOPMENT JOURNAL NATURAL SCIENCE VOL 1 ISSUE 6 2017 Some physical results of single electron transitor Le Hoang Minh Ho Chi Minh City University of Technology and Education Dinh Sy Hien The University of Science VNU-HCM Email dshien52@yahoo.com Received on 2ơhJanuary 2017 accepted on 15 hOctober 2017 ABSTRACT Single electron transistor SET is a key element in current research area of nanoelectronics and nanotechnology which can offer nano-feature size low power consumption and high operating speed. SET is a new nanoscale switching device. It can control the motion of the single electron. The goal of this paper is to discuss about some physical properties of the SET and focuses on simulation of basic quantum device characteristics such as tunneling effect Coulomb blockage Quantum dot Coulomb staircase and Coulomb oscillation. The current-voltage characteristics of SET are explored for illustration. Two types of metallic and semiconducting SETs have been simulated. Key words single electron transistor current-voltage characteristics Coulomb blockage Coulomb staircase Coulomb oscillation INTRODUCTION Rapid progress in microelectronics has pushed the MOSFET dimension toward the physical limit 10 nm . In the future it is probable that the nano-MOSFETs could be replaced by new fundamental devices such as single electron transistor SET . SETs have attracted much attention for IC applications because of their nanofeature size ultra-low power dissipation high frequency new functionalities and CMOS compatible fabrication process 1 . After their discovery in the 1986 2 3 there has been extensive research on the fabrication design and modeling of SETs 4 . SETs with a variety of structures were proposed and fabricated by using different methods 5-7 . SETs have been fabricated to operate at room temperature 8-10 . Molecular quantum dot 11 can display SET s behavior. 1D structures such as carbon nanotubes and nanowires can act as SETs 7 . Recent advances in