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Preparation of high quality polycrystalline silicon thin films, Aluminum induced crystallization,

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In this paper, high-quality polycrystalline silicon (poly-Si) thin films on glass substrates are formed by Aluminum-induced crystallization (AIC). In AIC processes, bi-layer structures of amorphous silicon (a-Si) / Al are transformed into ones of (Al+ residual Si)/ poly-Si after simply annealing at 500°C in vacuum furnace. | Preparation of high quality polycrystalline silicon thin films, Aluminum induced crystallization,

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