tailieunhanh - CMOS VLSI Design - Lecture 3: CMOS Transistor Theory

So far, we have treated transistors as ideal switches An ON transistor passes a finite amount of current – Depends on terminal voltages – Derive current-voltage (I-V) relationships Transistor gate, source, drain all have capacitance – I = C (∆V/∆t) - ∆t = (C/I) ∆V – Capacitance and current determine speed .MOS Capacitor Gate and body form MOS capacitor V Vt + inversion region depletion region .Terminal Voltages Vg Mode of operation depends on Vg, Vd, Vs + + – Vgs = Vg – Vs Vgs Vgd – Vgd = Vg – Vd Vs Vd – Vds = Vd – Vs. | Lecture 3 CMOS Transistor Theory Outline Introduction MOS Capacitor nMOS I-V Characteristics pMOS I-V Characteristics Gate and Diffusion Capacitance 3 CMOS Transistor Theory CMOS VLSI Design 4th Ed- 2 Introduction So far we have treated transistors as ideal switches An ON transistor passes a finite amount of current - Depends on terminal voltages - Derive current-voltage I-V relationships Transistor gate source drain all have capacitance - I C AVAt - At C I AV - Capacitance and current determine speed --- --- 4----- -------c ---c --- 3 CMOS Transistor Theory CMOS VLSI Design 4th Ed-

• Điện - Điện tử
• CMOS chip
• CMOS transistors
• Integrated circuits
• Building logic gates
• systems perspective
• Circuits
• CMOS VLSI Design
• modern Design
• chip design
• unsurpassed circuit level coverage
• microprocessors
• computer arithmetic
• Electronic Engineering
• Mạng trên chip
• Chuyển mạch gói
• Mô hình lưới
• Công nghệ CMOS 90nm
• Công suất tiêu thụ