tailieunhanh - Báo cáo hóa học: " Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Valence band offset of wurtzite InN/SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy | Li et al. Nanoscale Research Letters 2011 6 193 http content 6 1 193 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Valence band offset of wurtzite InN SrTiO3 heterojunction measured by x-ray photoelectron spectroscopy Zhiwei Li Biao Zhang Jun Wang Jianming Liu Xianglin Liu Shaoyan Yang Qinsheng Zhu and Zhanguo Wang Abstract The valence band offset VBO of wurtzite indium nitride strontium titanate InN SrTiO3 heterojunction has been directly measured by x-ray photoelectron spectroscopy. The VBO is determined to be eV and the conduction band offset is deduced to be eV indicating the heterojunction has a type-I band alignment. The accurate determination of the valence and conduction band offsets paves a way to the applications of integrating InN with the functional oxide SrTiO3. Introduction Group III nitrides have attracted much attention in recent years for their promising applications in high-power high-speed devices 1 2 . Among the group III nitrides indium nitride InN with a narrow direct band gap small effective mass 3 and large electron saturation drift velocity 4 presents enormous potential for device applications such as near-infrared optoelectronics high-efficiency solar cells and high-speed electronics. Generally InN is grown on foreign substrates such as sapphire SiC 111 silicon Si and GaAs. Strontium titanate SrTiO3 or STO single crystal with a cubic perovskite structure is also a good candidate. STO is often used to deposit functional oxide films which exhibit ferroelectricity ferromagneticity and superconductivity so InN STO heterojunction can integrate the superior optoelectronic properties of InN with the various functional characters of perovskites and will be developed in the future. On the other hand InN STO heterojunction is a promising structure for fabricating optical and electrical devices since researchers found out that oxidation treatment can reduce the surface .