tailieunhanh - ul Hasan et al. Nanoscale Research Letters 2011, 6:348

ul Hasan et al. Nanoscale Research Letters 2011, 6:348 NANO EXPRESS Open Access Single nanowire-based UV photodetectors for fast switching Kamran ul Hasan1*, N H Alvi1, Jun Lu2, O Nur1 and Magnus Willander1 Abstract Relatively long (30 µm) high quality ZnO nanowires (NWs) were grown by the vapor-liquid-solid (VLS) technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage (I-V) measurements for the Schottky diode show clear rectifying behavior and no reverse breakdown was seen down to -5 V. High. | ul Hasan et al. Nanoscale Research Letters 2011 6 348 http content 6 1 348 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Single nanowire-based UV photodetectors for fast switching 1 12 1 1 Kamran ul Hasan N H Alvi Jun Lu O Nur and Magnus Willander Abstract Relatively long 30 gm high quality ZnO nanowires NWs were grown by the vapor-liquid-solid VLS technique. Schottky diodes of single NW were fabricated by putting single ZnO NW across Au and Pt electrodes. A device with ohmic contacts at both the sides was also fabricated for comparison. The current-voltage I-V measurements for the Schottky diode show clear rectifying behavior and no reverse breakdown was seen down to -5 V. High current was observed in the forward bias and the device was found to be stable up to 12 V applied bias. The Schottky barrier device shows more sensitivity lower dark current and much faster switching under pulsed UV illumination. Desorption and re-adsorption of much smaller number of oxygen ions at the Schottky junction effectively alters the barrier height resulting in a faster response even for very long NWs. The NW was treated with oxygen plasma to improve the switching. The photodetector shows high stability reversibility and sensitivity to UV light. The results imply that single ZnO NW Schottky diode is a promising candidate for fabricating UV photodetectors. Introduction Zinc oxide ZnO is a unique material with semiconducting and piezoelectric dual properties. It is turning out to be a very important material due to its wide variety of potential applications in everyday life like sunscreens miniaturized lasers light sources sensors piezoelectric elements for power nano-generators transparent electrodes 1 etc. ZnO has many advantages over other wide bangap semiconductors like direct band gap of eV large excitons binding energy of 60 meV high thermal chemical stabilities and the option of wet chemical etching etc. 1 2 . This .

TÀI LIỆU LIÊN QUAN
crossorigin="anonymous">
Đã phát hiện trình chặn quảng cáo AdBlock
Trang web này phụ thuộc vào doanh thu từ số lần hiển thị quảng cáo để tồn tại. Vui lòng tắt trình chặn quảng cáo của bạn hoặc tạm dừng tính năng chặn quảng cáo cho trang web này.