tailieunhanh - Arapkina et al. Nanoscale Research Letters 2011, 6:218

Arapkina et al. Nanoscale Research Letters 2011, 6:218 NANO EXPRESS Open Access Phase transition on the Si(001) clean surface prepared in UHV MBE chamber: a study by high-resolution STM and in situ RHEED Larisa V Arapkina*, Vladimir A Yuryev*, Kirill V Chizh, Vladimir M Shevlyuga, Mikhail S Storojevyh, Lyudmila A Krylova Abstract The Si(001) surface deoxidized by short annealing at T ~ 925°C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy (STM)and redegreesected high-energy electron diffraction (RHEED. RHEED patterns corresponding to (2 × 1) and (4 × 4) structures were observed during sample treatment | Arapkina et al. Nanoscale Research Letters 2011 6 218 http content 6 1 218 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Phase transition on the Si 001 clean surface prepared in UHV MBE chamber a study by high-resolution STM and in situ RHEED Larisa V Arapkina Vladimir A Yuryev Kirill V Chizh Vladimir M Shevlyuga Mikhail S Storojevyh Lyudmila A Krylova Abstract The Si 001 surface deoxidized by short annealing at T 925 C in the ultrahigh vacuum molecuar beam epitaxy chamber has been in situ investigated using high-resolution scanning tunneling microscopy STM and redegreesected high-energy electron diffraction RHEED. RHEED patterns corresponding to 2 X 1 and 4 X 4 structures were observed during sample treatment. The 4 X 4 reconstruction arose at T ầ 600 C after annealing. The reconstruction was observed to be reversible the 4 X 4 structure turned into the 2 X 1 one at T ầ 600 C the 4 X 4 structure appeared again at recurring cooling. The c 8 X 8 reconstruction was revealed by STM at room temperature on the same samples. A fraction of the surface area covered by the c 8 X 8 structure decreased as the sample cooling rate was reduced. The 2 X 1 structure was observed on the surface free of the c 8 X 8 one. The c 8 X 8 structure has been evidenced to manifest itself as the 4 X 4 one in the RHEED patterns. A model of the c 8 X 8 structure formation has been built on the basis of the STM data. Origin of the high-order structure on the Si 001 surface and its connection with the epinucleation phenomenon are discussed. PACS Introduction Investigations of clean silicon surfaces prepared in conditions of actual technological chambers are of great interest due to the industrial requirements to operate on nanometer and subnanometer scales when designing future nanoelectronic devices 1 . In the nearest future the sizes of structural elements of such devices will be close to the dimensions

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