tailieunhanh - Báo cáo hóa học: " Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth | Michelakaki et al. Nanoscale Research Letters 2011 6 414 http content 6 1 414 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Porous anodic alumina on galvanically grown PtSi layer for application in template-assisted Si nanowire growth 1 1 22 2 Irini Michelakaki Androula G Nassiopoulou Eleni Stavrinidou Katerina Breza and Nikos Frangis Abstract We report on the fabrication and morphology structural characterization of a porous anodic alumina PAA PtSi nano-template for use as matrix in template-assisted Si nanowire growth on a Si substrate. The PtSi layer was formed by electroless deposition from an aqueous solution containing the metal salt and HF while the PAA membrane by anodizing an Al film deposited on the PtSi layer. The morphology and structure of the PtSi layer and of the alumina membrane on top were studied by Scanning and High Resolution Transmission Electron Microscopies SEM HRTEM . Cross sectional HRTEM images combined with electron diffraction ED were used to characterize the different interfaces between Si PtSi and porous anodic alumina. Introduction Semiconductor nanowires NWs constitute a fundamental building block for the development of nanoscale devices such as nanowire field effect transistors FETs energy harvesting devices third generation solar cells sensors and photonic devices. Among them Si NWs are particularly investigated and a lot of interesting devices based on them have been already demonstrated 1-8 . Compound semiconductor NWs are also intensively investigated for their applications in light emitting devices and lasers 9-11 . One of the most commonly used NW synthesis techniques for both Si and compound semiconductor nanowires is chemical vapor deposition CVD using a noble metal as catalyst. The growth follows in general the vapor-liquid-solid VLS process. Au is typically used as catalyst however it is well known that this material when incorporated into the Si lattice can introduce