tailieunhanh - MOSFET MODELING FOR VLSI SIMULATION - Theory and Practice Episode 13

Tham khảo tài liệu 'mosfet modeling for vlsi simulation - theory and practice episode 13', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 456 9 Data Acquisition and Model Parameter Measurements a Fig. a Experimental setup for measuring gate-to-channel capacitance Cac. b CGC as a function of gate voltage Vgs for 3 different substrate biases Vsb 0 1 and 3 V. The dotted lines are inversion charge density Qị QJWL calculated using Eq. To measure gate to substrate capacitance Cgb the source and drain are connected to the ground the substrate to the Lo terminal of the capacitance meter and the gate to the Hi terminal as shown in Figure . Once Cgb as a function of Vgs is known the Qb can be obtained using Eq. using the same procedure as for calculating Qi. Figure shows measured gate-to-bulk capacitance Cgb of an nMOST the device whose Cgc is shown in Figure for three different Fsfc 0 1 and 3 V . The corresponding Qb are shown as dotted lines. Determination of Effective Channel Length and Width 457 LCR METER HP4275 A Hi Lo 0 Fig. a Experimental setup for measuring gate-to-bulk capacitance CGB. b CGB as a function of gate voltage Vqs for 3 different substrate biases Vsb 0 1 and 3 V. The dotted lines are bulk charge density QB QblWL calculated using Eq. Determination of Effective Channel Length and Width The most basic parameters of a MOSFET are those which define the effective or electrical length L and width w of the transistors. These parameters play an important role in governing the device characteristics of small geometry devices. The device L differs from the drawn channel length Lm physical mask dimensions by a factor AL such that L Lm AL cf. Eq. . Similarly the device w is generally smaller than the drawn device width Wm physical mask dimension by a factor AIF such that w Wm A w cf. Eq. . It is the L and w and not Lm and Wm which are used for modeling MOSFET devices cf. section . This in turn requires AL and A IF to be known. In this section we will discuss various methods of determining AL and A IF of a MOSFET. 458 9 Data Acquisition .

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