tailieunhanh - Báo cáo hóa học: " Self-assembled monolayer of designed and synthesized triazinedithiolsilane molecule as interfacial adhesion enhancer for integrated circuit"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Self-assembled monolayer of designed and synthesized triazinedithiolsilane molecule as interfacial adhesion enhancer for integrated circuit | Wang et al. Nanoscale Research Letters 2011 6 483 http content 6 1 483 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Self-assembled monolayer of designed and synthesized triazinedithiolsilane molecule as interfacial adhesion enhancer for integrated circuit Fang Wang Yanni Li Yabin Wang and Zhuo Cao Abstract Self-assembled monolayer SAM with tunable surface chemistry and smooth surface provides an approach to adhesion improvement and suppressing deleterious chemical interactions. Here we demonstrate the SAM comprising of designed and synthesized 6- 3-triethoxysilylpropyl amino-1 3 5-triazine-2 4-dithiol molecule which can enhance interfacial adhesion to inhibit copper diffusion used in device metallization. The formation of the triazinedithiolsilane SAM is confirmed by X-ray photoelectron spectroscopy. The adhesion strength between SAM-coated substrate and electroless deposition copper film was up to MPa. The design strategy of triazinedithiolsilane molecule is expected to open up the possibilities for replacing traditional organosilane to be applied in microelectronic industry. Keywords adhesion copper diffusion barrier self-assembled monolayer surface chemistry Introduction Isolating individual components of nanoscale architectures comprised of thin films or nanostructures is a critical challenge in micro- and nanoscale device fabrication 1 . One important example that illustrates this challenge could be seen in Cu-interconnected sub-100-nm device structures which require less than 5-nm-thick interfacial layers to inhibit Cu diffusion into adjacent dielectrics 2 . Conventional interfacial barrier layers such as TaN Ta Ti TiN or W have already been optimized in microelectronic applications. However such thick layers are not suitable for micro- and nanoscale device fabrication and the above materials cannot form uniform and continuous film below 5 nm in thickness 3 . The barrier layer thickness must be .