tailieunhanh - Báo cáo hóa học: "Two novel low-power and high-speed dynamic carbon nanotube full-adder cells"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Two novel low-power and high-speed dynamic carbon nanotube full-adder cells | Bagherizadeh and Eshghi Nanoscale Research Letters 2011 6 519 http content 6 1 519 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Two novel low-power and high-speed dynamic carbon nanotube full-adder cells Mehdi Bagherizadeh 1 and Mohammad Eshghi2 Abstract In this paper two novel low-power and high-speed carbon nanotube full-adder cells in dynamic logic style are presented. Carbon nanotube field-effect transistors CNFETs are efficient in designing a high performance circuit. To design our full-adder cells CNFETs with three different threshold voltages low threshold normal threshold and high threshold are used. First design generates SUM and COUT through separate transistors and second design is a multi-output dynamic full adder. Proposed full adders are simulated using HSPICE based on CNFET model with V supply voltages. Simulation result shows that the proposed designs consume less power and have low power-delay product compared to other CNFET-based full-adder cells. Keywords carbon nanotube transistor dynamic full adder low power high speed Introduction Carbon nanotube field-effect transistors CNFETs are one of the new devices for designing low-power and high-performance circuits 1 2 . Scaling of complementary metal-oxide semiconductor CMOS technology to the nano ranges has many limitations and leads to increase the leakage currents power dissipation and short-channel effects 1-3 . CNFET technology mitigates these problems and these limitations of CMOS technology. Carbon nanotubes CNTs are sheets of graphite which formed into cylinders. A nanotube with one layer of carbon atoms is single-wall carbon nanotube SWCNT and a CNT with multiple layers of carbon atoms is multi-wall carbon nanotube MWCNT . SWCNT has the ability to act as a conductor metal and as a semiconductor as well 2 4 . The threshold voltage of a CNFET depends to its size Equation 1 V h 1 3 cDcnt Where e is the unit electron charge Vn eV

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