tailieunhanh - Báo cáo hóa học: " Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates"

Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Nanostructured Al-ZnO/CdSe/Cu2O ETA solar cells on Al-ZnO film/quartz glass templates | Wang et al. Nanoscale Research Letters 2011 6 614 http content 6 1 614 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Nanostructured Al-ZnO CdSe Cu2O ETA solar cells on Al-ZnO film quartz glass templates Xianghu Wang 1 Rongbin Li1 and Donghua Fan2 Abstract The quartz Al-ZnO film nanostructured Al-ZnO CdSe Cu2O extremely thin absorber solar cell has been successfully realized. The Al-doped ZnO one-dimensional nanostructures on quartz templates covered by a sputtering Al-doped ZnO film was used as the n-type electrode. A 19- to 35-nm-thin layer of CdSe absorber was deposited by radio frequency magnetron sputtering coating the ZnO nanostructures. The voids between the Al-ZnO CdSe nanostructures were filled with p-type Cu2O and therefore the entire assembly formed a p-i-n junction. The cell shows the energy conversion efficiency as high as which is an interesting option for developing new solar cell devices. PACS . Keywords extremely thin absorber oxide semiconducting material window material for solar cell Introduction Extremely thin absorber ETA solar cells have attracted much attention because of their probability to be lowcost solar cells. It consists of a nano- or microstructured layer which also serves as an n-type window layer to the cell an absorber Eg eV that is conformably deposited on the layer and a void-filling p-type material with a metallic back contact. Oxide semiconducting materials have potential applications in ETA solar cells as p- and n-type widow layers due to their many excellent physical properties and economic values such as having a wide bandgap good thermal stability and being a low-cost and environment-friendly material. However it is difficult to achieve p- and n-type oxide semiconductors simultaneously. One-dimensional 1-D nanostructured zinc oxide ZnO semiconducting materials which are intrinsic n-type wide-bandgap semiconductors with a direct .