tailieunhanh - Báo cáo hóa học: " Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires"

Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowires | Kim et al. Nanoscale Research Letters 2011 6 552 http content 6 1 552 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Effects of silver impurity on the structural electrical and optical properties of ZnO nanowires Kyoungwon Kim1 2 Pulak Chandra Debnath1 3 Deuk-Hee Lee1 2 Sangsig Kim2 3 and Sang Yeol Lee3 4 Abstract 1 3 and 5 wt. silver-doped ZnO SZO nanowires NWs are grown by hot-walled pulsed laser deposition. After silver-doping process SZO NWs show some change behaviors including structural electrical and optical properties. In case of structural property the primary growth plane of SZO NWs is switched from 002 to 103 plane and the electrical properties of SZO NWs are variously measured to be about X 106 X 106 and X 105 Q for 1 3 and 5 SZO NWs respectively. In other words the electrical properties of SZO NWs depend on different Ag ratios resulting in controlling the carrier concentration. Finally the optical properties of SZO NWs are investigated to confirm p-type semiconductor by observing the exciton bound to a neutral acceptor A0X . Also Ag presence in ZnO NWs is directly detected by both X-ray photoelectron spectroscopy and energy dispersive spectroscopy. These results imply that Ag doping facilitates the possibility ofchanging the properties in ZnO NWs by the atomic substitution of Ag with Zn in the lattice. 1. Introduction As an important II-VI semiconductor ZnO is a promising material for the use in ultraviolet or visible optoelectronic device because of its large exciton binding energy 60 meV and direct wide band gap eV 1-4 . For decade ZnO NWs have attracted a considerable amount of research interest because of the potential applications for nano-scale optoelectronic devices such as light emitting diodes LED field effect transistors FETs solar cells and ultraviolet UV lasers 5-7 . Compared with thin film structures one-dimensional 1D semiconductor devices such as nanotube 8 .