tailieunhanh - Báo cáo hóa học: " Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate"
Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Characterization of ultrathin InSb nanocrystals film deposited on SiO2/Si substrate | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Characterization of ultrathin InSb nanocrystals film deposited on SiO2 Si substrate Nanoscale Research Letters 2011 6 601 doi 1556-276X-6-601 Li Dengyue dyli2012@ Hongtao Li lilihhtt@ Hehui Sun hh_sun@ Liancheng Zhao lczhao@ ISSN 1556-276X Article type Nano Express Submission date 20 September 2011 Acceptance date 23 November 2011 Publication date 23 November 2011 Article URL http content 6 1 601 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2011 Dengyue et al. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Characterization of ultrathin InSb nanocrystals film deposited on SiO2 Si substrate Dengyue Li Hongtao Li Hehui Sun and Liancheng Zhao Department of Information Materials Science and Technology Harbin Institute of Technology Harbin 150001 P. R. China Corresponding author llhhtt@ Email addresses DYL dyli2012@ HHS hh_sun@ LCZ lczhao@ Abstract Recently solid-phase recrystallization of ultrathin indium antimonide nanocrystals InSb NCs films grown on SiO2 Si substrate is very attractive because of the rapid .
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