tailieunhanh - Báo cáo hóa học: " Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells"

Tuyển tập các báo cáo nghiên cứu về hóa học được đăng trên tạp chí hóa hoc quốc tế đề tài : Bipolar resistance switching characteristics with opposite polarity of Au/SrTiO3/Ti memory cells | Sun et al. Nanoscale Research Letters 2011 6 599 http content 6 1 599 o Nanoscale Research Letters a SpringerOpen Journal NANO IDEA Open Access Bipolar resistance switching characteristics with opposite polarity of Au SrTiO3 Ti memory cells Xianwen Sun Guoqiang Li Li Chen Zihong Shi and Weifeng Zhang Abstract Two types of bipolar resistance switching with eightwise and counter eightwise polarities are observed to coexist in Au SrTiO3 Ti memory cells. These two types of switching can be induced by different defect distributions which are activated by controlling the electric process. The analyses of I-V and C-V data reveal that the resistance switching with eightwise polarity originates from the change of Schottky barrier at the Au SrTiO3 interface caused by trapping detrapping effects at interface defect states while the switching with counter eightwise polarity is caused by oxygen-vacancy migration. Keywords Au SrTiO3 Ti bipolar resistance switching Schottky barrier Introduction Resistance switching between a high-resistance state HRS and a low-resistance state LRS by voltage pulses has recently attracted intensive attention for their potential application in the next-generation nonvolatile memory 1 . Many perovskite-type transition metal oxides especially titanates 2-6 zirconates 7 8 and manganites 9-11 have been investigated as resistance switching materials. The resistance switching effect can be classified into two types bipolar and unipolar 12 13 . Perovskite-type metal oxide devices generally exhibit bipolar resistance switching in which the resistance state depends on the polarity of voltage. Two types of polarity behavior under the same bias voltage exist in the bipolar resistance switching. For the positive bias voltage one is eightwise polarity which changes resistance from a HRS to a LRS the other is counter eightwise polarity which converts a LRS into a HRS 14 15 . Up to now the underlying mechanism for bipolar resistance .