tailieunhanh - Báo cáo hóa học: " Narrow ridge waveguide high power single mode 1.3-lm InAs/InGaAs ten-layer quantum dot lasers"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Narrow ridge waveguide high power single mode InAs/InGaAs ten-layer quantum dot lasers | Nanoscale Res Lett 2007 2 303-307 DOI s11671-007-9066-4 NANO EXPRESS Narrow ridge waveguide high power single mode InAs InGaAs ten-layer quantum dot lasers Q. Cao S. F. Yoon C. Y. Liu C. Y. Ngo Received 18 April 2007 Accepted 23 May 2007 Published online 14 June 2007 to the authors 2007 Abstract Ten-layer InAs quantum dot QD laser structures have been grown using molecular beam epitaxy MBE on GaAs 001 substrate. Using the pulsed anodic oxidation technique narrow 2 m ridge waveguide RWG InAs QD lasers have been fabricated. Under continuous wave operation the InAs QD laser 2 X 2 000 m2 delivered total output power of up to mW at 10 C at m. Under pulsed operation where the device heating is greatly minimized the InAs QD laser 2 X 2 000 m2 delivered extremely high output power both facets of up to W at 20 C at high external differential quantum efficiency of 96 . Far field pattern measurement of the 2- m RWG InAs QD lasers showed single lateral mode operation. Keywords Molecular beam epitaxy Single lateral mode InAs InGaAs quantum dot Pulsed anodic oxidation Laser diode Introduction High-performance GaAs-based quantum dot QD lasers are of great interest due to their potential applications in advanced optical fiber communication systems 1-9 . The reduced density of states arising from the three-dimensional confinement of carriers give QDs the advantages to be able to achieve low threshold current density and high differential gain 2 5 6 10 . High power high efficiency Q. Cao S. F. Yoon H C. Y. Liu C. Y. Ngo School of Electrical and Electronic Engineering Nanyang Technological University Nanyang Avenue Singapore 639798 Republic of Singapore e-mail esfyoon@ and temperature insensitivity have been reported for InAs QD lasers 3 5 6 . However the laser performance is commonly restrained by the intrinsically low surface density NQD of a single-layer QD structure 7 . As the achievable optical gain which is limited by .