tailieunhanh - Báo cáo hóa học: " Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing | Nanoscale Res Lett 2007 2 550-553 DOI s11671-007-9097-x NANO EXPRESS Multiple Wavelength InGaAs Quantum Dot Lasers Using Ion Implantation Induced Intermixing S. Mokkapati Sichao Du M. Buda L. Fu H. H. Tan C. Jagadish Received 27 August 2007 Accepted 6 September 2007 Published online 25 September 2007 to the authors 2007 Abstract We demonstrate multiple wavelength InGaAs quantum dot lasers using ion implantation induced intermixing. Proton implantation followed by annealing is used to create differential interdiffusion in the active region of the devices. The characteristics lasing-spectra threshold currents and slope efficiencies of the multi-wavelength devices are compared to those of as-grown devices and the differences are explained in terms of altered energy level spacing in the annealed quantum dots. Keywords Quantum dot lasers Ion implantation Integration of several quantum dot QD devices on a single chip offers the advantages of compact size high speed and low optical losses added to the advantages discrete QD devices offer due to three-dimensional carrier confinement in the active region. Ion implantation induced intermixing is a technique that is compatible with planar processing and can be used for band gap tuning essential for device integration. Ion implantation induced intermixing has been widely used for band gap tuning of quantum wells 1 2 QW and QDs 3-8 . QW based integrated photonic devices have also been demonstrated using implantation induced intermixing 9 10 . Though there are many reports on band gap tuning of QDs there are no S. Mokkapati H S. Du L. Fu H. H. Tan C. Jagadish Department of Electronic Materials Engineering Research School of Physical Sciences and Engineering The Australian National University Canberra ACT 0200 Australia e-mail smokkapati@ M. Buda National Institute of Materials Physics Str. Atomistilor 105bis . Box MG-7 Magurele 077125 Romania reports to date on multi-color QD lasers using ion implantation .