tailieunhanh - Báo cáo hóa học: " Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures Harish Bahadur Æ A. K. Srivastava Æ R. K. Sharma Æ Sudhir Chandra"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Morphologies of Sol–Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures Harish Bahadur Æ A. K. Srivastava Æ R. K. Sharma Æ Sudhir Chandra | Nanoscale Res Lett 2007 2 469-475 DOI s11671-007-9089-x NANO REVIEW Morphologies of Sol-Gel Derived Thin Films of ZnO Using Different Precursor Materials and their Nanostructures Harish Bahadur A. K. Srivastava R. K. Sharma Sudhir Chandra Received 14 June 2007 Accepted 14 August 2007 Published online 9 September 2007 to the authors 2007 Abstract We have shown that the morphological features of the sol-gel derived thin films of ZnO depend strongly on the choice of the precursor materials. In particular we have used zinc nitrate and zinc acetate as the precursor materials. While the films using zinc acetate showed a smoother topography those prepared by using zinc nitrate exhibited dendritic character. Both types of films were found to be crystalline in nature. The crystallite dimensions were confined to the nanoscale. The crystallite size of the nanograins in the zinc nitrate derived films has been found to be smaller than the films grown by using zinc acetate as the precursor material. Selected area electron diffraction patterns in the case of both the precursor material has shown the presence of different rings corresponding to different planes of hexagonal ZnO crystal structure. The results have been discussed in terms of the fundamental considerations and basic chemistry governing the growth kinetics of these sol-gel derived ZnO films with both the precursor materials. Keywords ZnO thin films Morphologies Sol-Gel XRD SEM TEM H. Bahadur El A. K. Srivastava R. K. Sharma National Physical Laboratory . Krishnan Road New Delhi 110012 India e-mail hbahadur@ S. Chandra Center for Applied Research in Electronics Indian Institute of Technology Hauz Khas New Delhi 110016 India Introduction ZnO is one of the most important nanomaterials for integration in microsystems and biotechnology. It is a semiconductor with a wide band gap of eV and large exciton binding energy of 60 meV. This makes it useful in a number of photonic applications. Due to its .