tailieunhanh - Báo cáo hóa học: " Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles | Nanoscale Res Lett 2007 2 450-454 DOI s11671-007-9085-1 NANO EXPRESS Layers of Metal Nanoparticles on Semiconductors Deposited by Electrophoresis from Solutions with Reverse Micelles K. Zdansky P. Kacerovsky J. Zavadil J. Lorincik A. Fojtik Received 15 May 2007 Accepted 27 July 2007 Published online 16 August 2007 to the authors 2007 Abstract Pd nanoparticles were prepared with reverse micelles of water AOT isooctane solution and deposited onto silicon or InP substrates by electrophoresis. A large change of capacitance-voltage characteristics of mercury contacts on a semiconductor was found after Pd deposition. This change could be modified when the Pd deposition is followed by a partial removal of the deposited AOT. The deposited Pd nanoparticles were investigated by optical mictroscopy SIMS and SEM. Finally Schottky diodes with barrier height as high as eV were prepared by deposition of Pd nanoparticles on n-type InP and by a partial removal of superfluous AOT. These diodes are prospective structures for further testing as hydrogen sensors. Keywords Nanoparticles Electrophoresis Schottky barrier InP Introduction Formation of stable reproducible high-barrier metal InP interfaces is an essential prerequisite for the development K. Zdansky El P. Kacerovsky J. Zavadil J. Lorincik Institute of Photonics and Electronics Academy of Sciences of the Czech Republic 18251 Prague 8 Czech Republic e-mail zdansky@ J. Lorincik Faculty of Science J. E. Purkyne University 40096 Usti nad Labem Czech Republic A. Fojtik Faculty of Nuclear Sciences and Physical Engineering Czech Technical University Prague Czech Republic of high-speed electronic devices charge-control devices optoelectronic detectors and wave-guides. High quality metal InP interfaces are demanded also for good performance of InP based particle detectors. Recently sensors of hydrogen 1 or NO2 gas 2 based on metal InP interfaces have been reported. Gas sensors have been used for industrial process .