tailieunhanh - Carbon Nanostructures

Since chemical vapor deposition of carbon-containing precursors onto transition metals tends to develop as the preferred growth process for the mass production of graphene films, the deep understanding of its mechanism becomes mandatory. In the case of nickel, which represents an economically viable catalytic substrate, the solubility of carbon is significant enough so that the growth mechanism proceeds in at least two steps: the dissolution of carbon in the metal followed by the precipitation of graphene at the surface. In this work, we use ion implantation to dissolve calibrated amounts of carbon in nickel thin films and grow graphene films by annealing. Observations of those graphene films using. | Carbon Nanostructures For further volumes http series 8633 Luca Ottaviano Vittorio Morandi Editors GraphlTA 2011 Selected Papers from the Workshop on Fundamentals and Applications of Graphene Springer Luca Ottaviano Dipartimento di Fisica Università dell Aquila Via Vetoio 10 67100 Coppito-L Aquila Italy Vittorio Morandi CNR IMM Sezione di Bologna via Gobetti 101 40129 Bologna Italy ISSN 2191-3005 e-ISSN 2191-3013 ISBN 978-3-642-20643-6 e-ISBN 978-3-642-20644-3 DOI 978-3-642-20644-3 Springer Heidelberg New York Dordrecht London Library of Congress Control Number 2012930376 Springer-Verlag Berlin Heidelberg 2012 This work is subject to copyright. All rights are reserved by the Publisher whether the whole or part of the material is concerned specifically the rights of translation reprinting reuse of illustrations recitation broadcasting reproduction on microfilms or in any other physical way and transmission or information storage and retrieval electronic adaptation computer software or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher s location in its current version and permission for use must always be obtained from Springer. Permissions for use may be obtained through RightsLink at the Copyright Clearance Center. Violations are liable to prosecution under the respective Copyright Law. The use of general descriptive names registered names trademarks service marks etc. in this publication does not imply even in the absence of a specific statement that such names are exempt from the relevant protective laws and regulations and therefore free for .