tailieunhanh - Advances in Analog Circuits Part 9

Tham khảo tài liệu 'advances in analog circuits part 9', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Advanced Statistical Methodologies for Tolerance Analysis in Analog Circuit Design 229 functional failures when malfunctions affect chips parametric failures when chips fail to reach performances. Coming to their manufacturing we are used to distinguish three categories of failures that we synthesize through . random yield sometimes called statistical yield concerning the random effects occurring during the manufacturing process such as catastrophic faults in the form of open or short circuits. These faults may be a consequence of small particles in the atmosphere landing on the chip surface no matter how clean is the wafer manufacturing environment. An example of a random component is that of threshold voltage variability due to random dopant fluctuations Stolk et al. 1988 . systematic yield including printability issues related to systematic manufacturability issues deriving from combinations and interactions of events that can be identified and addressed in a systematic way. An example of these events is the variation in wire thickness with layout density due to Chemical Mechanical Polishing Planarization CMP Chang et al. 1995 . The distinction from the previous yield is important because the impact of systematic variability can be removed by adapting the design appropriately while random variability will inevitably impact design margins in a negative manner . parametric yield including variability issues dealing with the performance drifts induced by changes in the parameter setting - for instance lower drive capabilities increased leakage current and greater power consumption increased resistance and capacitance RC time constants and slower chips deriving from corruptions of the transistor channels. From a complementary perspective the unacceptable performance causes for a circuit may be split into two categories of disturbances local caused by disruption of the crystalline structure of silicon which typically determines the malfunctioning of a single

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