tailieunhanh - Properties and Applications of Silicon Carbide Part 3

Tham khảo tài liệu 'properties and applications of silicon carbide part 3', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | 52 Properties and Applications of Silicon Carbide Janson . Linnarsson . Hallén A. Svensson . 2003b . Ion implantation range distributions in silicon carbide. Journal of Applied Physics Vol. 93 No. 11 June 2003 8903-8909 0021-8979 Kinchin . Pease . 1955 . The displacement of atoms in solids by radiation. Reports on Progress in Physics Vol. 18 1955 1-51 0034-4885 Kuroda N. Shibahara K. Yoo . Nishino S. Matsunami H. 1987 . Step-controlled VPE growth of SiC single crystals at low temperatures Extended Abstracts of 19th Conference on Solid State Devices and Materials pp. 227-230 Tokyo 1987 Japan Society of Applied Physics Tokyo Lau F. 1990 . Modeling of polysilicon diffusion sources Technical Digest of International Electron Devices Meeting pp. 67-70 0163-1918 San Francisco Dec. 1990 IEEE Piscataway Lee . Park . 2002 . Empirical depth profile model for ion implantation in 4H-SiC. Journal of Korean Physical Society Vol. 41 No. 5 Nov. 2002 L591-L593 0374-4884 Linnarsson M. K. Janson M. S. Shoner A. Svensson . 2003 . Aluminum and boron diffusion in 4H-SiC Materials Research Society Proceedings Vol. 742 paper 155899-679-6 Warrendale Dec. 2002 Materials Research Society Boston Linnarsson . Janson . Schnoer A. Konstantinov A. Svensson . 2004 . Boron diffusion in intrinsic n-type amd p-type 4H-SiC. Materials Science Forum Vol. 457-460 2004 917-920 0255-5476 Linnarsson . Janson . Nordell N. Wong-Leung J. Schoner A. 2006 . Formation of precipitates in heavily boron doped 4H-SiC. Applied Surface Science Vol. 252 2006 5316-5320 0169-4332 Liu . Windl W. Borucki L. Lu S. 2002 . Ab initio modeling and experimental study of C-B interactions in Si. Applied Physics Letters Vol. 80 No. 1 Jan. 2002 52-54 0003-6951 Mochizuki K. Onose H. 2007 . Dual-Pearson approach to model ion-implanted Al concentration profiles for high-precision design of high-voltage 4H-SiC power devices Technical Digest of International Conference on Silicon Carbide