tailieunhanh - Engineering Materials and Processes phần 6

Người ta cho rằng việc tăng cường của tinh thể và tăng trưởng hạt màng mỏng thu được bằng cách phân tích nhiễu xạ X-quang được hiển thị trong hình góp phần giảm điện trở. Điện trở suất của cả hai Ag (Al)-I và Ag (Al)-II mỏng bộ phim là không đổi sau khi ủ ở 400 ° C. | Thermal Stability 61 30 25 20 15 10 5 0 Sputter Time min Sputter Time min Figure . Auger depth profiles of a Ag 200 nm Al 8 nm bilayer on SiO2 a as-deposited b 400 C c 700 C for 30 minutes annealed in Ar 16 62 Silver Metallization 2. Helium-Hydrogen Ambient Annealing the Ag Al structure in a flowing He-H ambient at temperatures between 400 C-700 C also resulted in the segregation of Al to the surface and the subsequent formation of a thin aluminum oxide at the surface Figure . Figure . RBS spectra MeV He 2 7 tilt of the diffusion barriers before and after being annealed in flowing He-H for 30 minutes at three different temperatures 16 The outdiffusion of Al increases with temperature. Although most of the Al segregates to the surface at 700 C the higher-than background signals of the trailing edges are indicative of the accumulation of Al in the Ag films at all temperatures. AES depth profiling of the Ag 200 nm Al 8 nm bilayer annealed at 700 C 30 minutes in a He-H ambient confirms the formation of an aluminum oxide surface layer Figure . However at this high temperature a small amount of Al is still present at the Ag SiO2 interface. Thermal Stability 63 Figure . Auger depth profiles of a Ag Al bilayer on SiO2 annealed in He-H at 700 C for 30 minutes 16 3. Ammonia Ambient RBS spectra showing only the depth distributions of Al for the Ag Al bilayer annealed in ammonia for temperature 400 C-700 C 30 minutes are depicted in Figure . For the temperature range 400 C to 500 C almost the same amount of Al diffuses to the surface. However a much larger amount of Al is present at the surface for the sample annealed at 700 C. The residual Al in the Ag varies from 7 at. at 500 C to less than 1 at. at 700 C