tailieunhanh - Manufacturing technology of the composite materials: nanocrystalline material – polymer type

The process, as described in step (c) is repeated for a shorter time to expose the bottom silicon surface for further dry etching, as shown in Fig. 9(g). In order to expose sidewalls for the wet etch release, the structure is deepened using a similar multi-step dry etch process as described in step (d), except that low energy, high pressure isotropic dry etching is used instead of high energy, high pressure to preserve the less robust silicon dioxide that had taken the place of Cr as the etch mask. This deepening of the structure determines the gap between the.