tailieunhanh - Báo cáo hóa học: " Photo-Induced Spin Dynamics in Semiconductor Quantum Wells"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Photo-Induced Spin Dynamics in Semiconductor Quantum Wells | Nanoscale Res Lett 2009 4 385-388 DOI S11671-008-9241-2 NANO PERSPECTIVES Photo-Induced Spin Dynamics in Semiconductor Quantum Wells M. Idrish Miah Received 14 November 2008 Accepted 30 December 2008 Published online 17 January 2009 to the authors 2009 Abstract We experimentally investigate the dynamics of spins in GaAs quantum wells under applied electric bias by photoluminescence PL measurements excited with circularly polarized light. The bias-dependent circular polarization of PL PPL with and without magnetic field is studied. The PPL without magnetic field is found to be decayed with an enhancement of increasing the strength of the negative bias. However PPL in a transverse magnetic field shows oscillations under an electric bias indicating that the precession of electron spin occurs in quantum wells. The results are discussed based on the electron-hole exchange interaction in the electric field. Keywords Photoluminescence Spin transport Exchange interaction Introduction Possibility of using information carried by the spin of the electron in electronic devices in addition to its charge has gained a lot of attention since the discovery of long spin lifetimes in semiconductor structures 1 leading to the M. I. Miah H Nanoscale Science and Technology Centre Griffith University Nathan Brisbane QLD 4111 Australia e-mail M. I. Miah School of Biomolecular and Physical Sciences Griffith University Nathan Brisbane QLD 4111 Australia M. I. Miah Department of Physics University of Chittagong Chittagong 4331 Bangladesh growth of the field spintronics 1-3 . This may lead to new devices beyond well-established storage or memory applications already implemented as giant magnetoresistance GMR read-heads and nonvolatile magnetic RAM MRAM 2 . One of the major hurdles in the development of spintronic devices has been the problem of efficiently injecting spin-polarized carriers into a semiconductor transporting them over reasonable distances without

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