tailieunhanh - Power Quality Harmonics Analysis and Real Measurements Data Part 9

Tham khảo tài liệu 'power quality harmonics analysis and real measurements data part 9', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Thermal Analysis of Power Semiconductor Converters 149 t s Fig. 26. Transient thermal impedance of the thyristor semiconductor junction dependent on the power device design enables new features for the optimization of power semiconductor converters. This has a great impact to the development and test costs of new power converters. 4. Conclusion From all previous thermal modelling simulation and experimental tests the following conclusions about transient thermal evolution of power semiconductor devices can be outlined the shape of input power and temperatures evolution depend on load type its value and firing angle in the case of power semicontrolled rectifiers increasing of load inductance value leads to decrease of input power and temperature values in the case of steady state thermal conditions the temperature variation is not so important at big values of load inductance and firing angle at big values of firing angle it can be noticed a decrease of input power values and temperatures there is a good correlation between simulation results and experimental tests because of very complex thermal phenomenon the analysis of power semiconductor device thermal field can be done using a specific 3D finite element method software therefore the temperature values anywhere inside or on the power semiconductor assembly can be computed both for steady-state or transient conditions using the 3D simulation software there is the possibility to improve the power semiconductor converters design and also to get new solutions for a better thermal behaviour of power semiconductor devices. Extending the model with thermal models for the specific applications enables the user of power semiconductors to choose the right ratings and to evaluate critical load cycles and to identify potential overload capacities for a dynamic grid loading. It was shown that the described thermal network simulation has a high potential for a variety of different applications development support 150 Power .