tailieunhanh - Báo cáo hóa học: " Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide | Nanoscale Res Lett 2009 4 29-33 DOI s11671-008-9197-2 NANO EXPRESS Nanocolumnar Preferentially Oriented PSZT Thin Films Deposited on Thermally Grown Silicon Dioxide S. Sriram M. Bhaskaran A. Mitchell D. R. G. Mitchell G. Kostovski Received 24 July 2008 Accepted 22 October 2008 Published online 11 November 2008 to the authors 2008 Abstract We report the first instance of deposition of preferentially oriented nanocrystalline and nanocolumnar strontium-doped lead zirconate titanate PSZT ferroelectric thin films directly on thermal silicon dioxide. No intermediate seed or activation layers were used between PSZT and silicon dioxide. The deposited thin films have been characterised using a combination of diffraction and microscopy techniques. Keywords PSZT thin films Silicon dioxide Nanocrystal XRD Microscopy Introduction There is potential for harnessing the nonlinear properties of ferroelectric thin films for applications in photonics and integration with left-handed materials metamaterials as has been demonstrated for bulk ferroelectric crystals 1 2 . These applications demand that ferroelectric thin films are deposited on dielectric and optically transparent material. One of the most suitable dielectric layers for the deposition of ferroelectrics is silicon dioxide SiO2 considering its thermal stability and suitability for optical applications. S. Sriram El M. Bhaskaran A. Mitchell G. Kostovski Microelectronics and Materials Technology Centre School of Electrical and Computer Engineering RMIT University GPO Box 2476V Melbourne VIC 3001 Australia e-mail D. R. G. Mitchell Institute of Materials Engineering Australian Nuclear Science and Technology Organisation PMB 1 Menai NSW 2234 Australia Lead zirconate titanate PZT is most commonly used ferroelectric material in commercial applications and results of characterisation of PZT thin films have been extensively reported . 3 4 . While deposition of thin films on PZT on SiO2 has been .