tailieunhanh - Báo cáo hóa học: " Hot Photoluminescence in c-In2Se3 Nanorods"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Hot Photoluminescence in c-In2Se3 Nanorods | Nanoscale Res Lett 2008 3 427-430 DOI s11671-008-9173-x NANO EXPRESS Hot Photoluminescence in y-In2Se3 Nanorods M. D. Yang C. H. Hu J. L. Shen S. M. Lan P. J. Huang G. C. Chi K. H. Chen L. C. Chen T. Y. Lin Received 10 July 2008 Accepted 11 September 2008 Published online 30 September 2008 to the authors 2008 Abstract The energy relaxation of electrons in y-In2Se3 nanorods was investigated by the excitation-dependent photoluminescence PL . From the high-energy tail of PL we determine the electron temperature Te of the hot electrons. The Te variation can be explained by a model in which the longitudinal optical LO -phonon emission is the dominant energy relaxation process. The high-quality y-In2Se3 nanorods may be a promising material for the photovoltaic devices. Keywords InSe nanorods Hot photoluminescence Energy relaxation M. D. Yang C. H. Hu J. L. Shen H Department of Physics Chung Yuan Christian University Chung-Li Taiwan e-mail jlshen@ S. M. Lan Institute of Nuclear Energy Research Longtan Taoyuan 32546 Taiwan P. J. Huang G. C. Chi Department of Physics National Central University Chung-Li 320 Taiwan K. H. Chen Institute of Atomic and Molecular Sciences Academia Sinica Taipei Taiwan L. C. Chen Center of Condensed Matter Science National Taiwan University Taipei Taiwan T. Y. Lin Institute of Optoelectronic Sciences National Taiwan Ocean University Keelung Taiwan Introduction The III-VI semiconductors have been the subject of many investigations due to their peculiar electrical and optical properties and their potential applications in electronic and optoelectronic devices 1-4 . Among these semiconductors y-In2Se3 has attracted attention because it is suitable for use in photovoltaic applications 5 . In the recent years many researchers have been interested in the synthesis of the nanoscale materials due to their unique properties and novel applications in optoelectronic and electronic devices 6-8 . Although some progress has been achieved .