tailieunhanh - Báo cáo hóa học: " Ultraviolet Laser Action in Ferromagnetic Zn12xFexO Nanoneedles"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Ultraviolet Laser Action in Ferromagnetic Zn12xFexO Nanoneedles | Nanoscale Res Lett 2010 5 247-251 DOI S11671-009-9473-9 NANO EXPRESS Ultraviolet Laser Action in Ferromagnetic Zn _vFevO Nanoneedles H. Y. Yang S. F. Yu S. P. Lau T. S. Herng M. Tanemura Received 13 August 2009 Accepted 16 October 2009 Published online 1 November 2009 to the authors 2009 Abstract Fe-doped ZnO nanoneedles NDs were fabricated by an Ar ion sputtering technique operated at room temperature. The as-grown samples show both ferromagnetic and lasing properties. The saturated magnetization moment was measured from to emu cm-3 at the field of 10 kOe with various Fe concentrations. Intense ultraviolet random lasing emission was observed from Zn1 - xFexO NDs at room temperature. The X-ray photoelectron spectroscopy result reveals that the doped Fe atoms occupy the Zn sites and lead to a decrease in oxygen deficiency. Keywords Zn1 - xFexO Nanoneedles Ferromagnetic Random lasing Ion beam ZnO-based diluted magnetic semiconductors DMSs have attracted great research attention due to a high Curie temperature above 300 K as predicted by theoretical calculation 1 2 . Recently ZnO-based DMSs bulk materials and thin films doped with Mn 3 Cu 4 Fe 5 and Co 6 have been realized by various fabrication methods. On the other hand developing one-dimensional 1D DMS H. Y. Yang El S. F. Yu T. S. Herng School of Electrical and Electronic Engineering Nanyang Technological University Nanyang 639798 Singapore e-mail hyyang@ S. P. Lau Department of Applied Physics The Hong Kong Polytechnic University Hung Hom Kowloon Hong Kong M. Tanemura Graduate School of Engineering Nagoya Institute of Technology Gokiso-Cho Showa-Ku Nagoya 466-8555 Japan materials are of great interest for the reason that the 1D nanomaterials are ideal research systems for fabricating nanoscale field effect transistors sensors optoelectronic devices logic circuits and lasers 7 . Hence 1D ZnO DMS material has been prepared by vapor-solid process and incorporation doping in the .