tailieunhanh - Production Process Characterization_5

Tham khảo tài liệu 'production process characterization_5', kỹ thuật - công nghệ, điện - điện tử phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | . Define Sampling Plan ENGINEERING STATISTICS HANDBOOK hW tools raids search BACK Nixf 3. Production Process Characterization . Data Collection for PPC . Define Sampling Plan Sampling plan is detailed outline of measurements to be taken A sampling plan is a detailed outline of which measurements will be taken at what times on which material in what manner and by whom. Sampling plans should be designed in such a way that the resulting data will contain a representative sample of the parameters of interest and allow for all questions as stated in the goals to be answered. Steps in the The steps involved in developing a sampling plan are sampling plan 1. identify the parameters to be measured the range of possible values and the required resolution 2. design a sampling scheme that details how and when samples will be taken 3. select sample sizes 4. design data storage formats 5. assign roles and responsibilities Verify and Once the sampling plan has been developed it can be verified and then execute passed on to the responsible parties for execution. NIST SEMATECH HOME TOOLS AID S SEARCH BACK NEXT http div898 handbook ppc section3 5 1 2006 10 17 36 AM . Identifying Parameters Ranges and Resolution ENGINEERING STATISTICS HANDBOOK hW tools raids lỉEÂtCH BACK Nixf 3. Production Process Characterization . Data Collection for PPC . Define Sampling Plan . Identifying Parameters Ranges and Resolution Our goals and the models we built in the previous steps should provide all of the information needed for selecting parameters and determining the expected ranges and the required measurement resolution. Goals will tell us what to measure and how The first step is to carefully examine the goals. This will tell you which response variables need to be sampled and how. For instance if our goal states that we want to determine if an oxide film can be grown on a wafer to within 10 Angstroms of the target value with a .