tailieunhanh - Báo cáo hóa học: "Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Research Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles | Nanoscale Res Lett 2009 4 1121-1125 DOI s11671-009-9366-y NANO EXPRESS Localized-Surface-Plasmon Enhanced the 357 nm Forward Emission from ZnMgO Films Capped by Pt Nanoparticles J. B. You X. W. Zhang J. J. Dong X. M. Song Z. G. Yin N. F. Chen H. Yan Received 15 April 2009 Accepted 26 May 2009 Published online 12 June 2009 to the authors 2009 Abstract The Pt nanoparticles NPs which posses the wider tunable localized-surface-plasmon LSP energy varying from deep ultraviolet to visible region depending on their morphology were prepared by annealing Pt thin films with different initial mass-thicknesses. A sixfold enhancement of the 357 nm forward emission of ZnMgO was observed after capping with Pt NPs which is due to the resonance coupling between the LSP of Pt NPs and the band-gap emission of ZnMgO. The other factors affecting the ultraviolet emission of ZnMgO such as emission from Pt itself and light multi-scattering at the interface were also discussed. These results indicate that Pt NPs can be used to enhance the ultraviolet emission through the LSP coupling for various wide band-gap semiconductors. Keywords ZnMgO films Photoluminescence Localized surface plasmon Nanoparticles Introduction Due to their wide band-gap and high exciton binding energy ZnO and its alloys are of considerable interest for applications as optoelectronic devices such as short- J. B. You X. W. Zhang H J. J. Dong Z. G. Yin N. F. Chen Key Lab of Semiconductor Materials Science Institute of Semiconductors CAS 100083 Beijing People s Republic of China e-mail xwzhang@ X. M. Song H. Yan Lab of Thin Film Materials College of Materials Science and Engineering Beijing University of Technology 100022 Beijing People s Republic of China wavelength light-emitting diode LED and laser diode LD . Especially the band-gap of Zn1-xMgxO alloys can be tuned from to eV by Mg incorporation with different contents which suggests that Zn1-xMgxO has great potential for using as .