tailieunhanh - .MOSFET MODELING FOR VLSI SIMULATIONTheory and Practice.International Series on Advances in Solid

.MOSFET MODELING FOR VLSI SIMULATION Theory and Practice .International Series on Advances in Solid State Electronics and Technology (ASSET) Founding Editor: Chih-Tang Sah Published: Modern Semiconductor Quantum Physics by Li Ming-Fu Topics in Growth and Device Processing of III-V Semiconductors by Stephen John Pearton, Cammy R. Abernathy & Fan Ren Ionizing Radiation Effects in MOS Oxides by Timothy R. Oldham Forthcoming. MOSFET Modeling for Circuit Analysis and Design by Carlos Galup-Montoro & Marcio Cherem Schneider The Physics and Modeling of MOSFETS: Surface-Potential Model HiSIM by Mitiko Miura-Mattausch, Hans Jurgen Mattausch & Tatsuya Ezaki BSIM4: Theory and Engineering of MOSFET Modeling for IC Simulation by Weidong Liu &. | ASSET nternational Series on Advances in Solid State Electronics and Technology Founding Editor Chih-Tang Sah MOSFET MODELING FOR VLSI SIMULATION Theory and Practice Narain Arora World Scientific MOSFET MODELING FOR VLSI SIMULATION Theory and Practice International Series on Advances in Solid State Electronics and Technology ASSET Founding Editor Chih-Tang Sah Published Modem Semiconductor Quantum Physics by Li Ming-Fu Topics in Growth and Device Processing of III-V Semiconductors by Stephen John Pearton Cammy R. Abernathy Fan Ren Ionizing Radiation Effects in MOS Oxides by Timothy R. Oldham Forthcoming MOSFET Modeling for Circuit Analysis and Design by Carlos Galup-Montoro Márcio Cherem Schneider The Physics and Modeling of MOSFETS Surface-Potential Model HiSIM by Mitiko Miura-Mattausch Hans Jurgen Mattausch Tatsuya Ezaki BSIM4 Theory and Engineering of MOSFET Modeling for IC Simulation by Weidong Liu Chenming .