tailieunhanh - Mobile and Wireless Communications Network layer and circuit level design 2012 Part 8

Tham khảo tài liệu 'mobile and wireless communications network layer and circuit level design 2012 part 8', kỹ thuật - công nghệ, cơ khí - chế tạo máy phục vụ nhu cầu học tập, nghiên cứu và làm việc hiệu quả | Large-Signal Modeling of GaN Devices for Designing High Power Amplifiers of Next Generation Wireless Communication Systems 201 8x125-pm device are 20 fF and 40 fF respectively. Due to the smaller values of these elements and also due to the smaller values of Lg and Ld for this device Cgda and Cgdi cannot be separated form Cgd. The parasitic inductance includes the self-inductance due the metallization contact and the mutual inductance between the metal interconnection. The mutual inductance increases by increasing the number of fingers. For this reason there is a considerable increase of Ld and Lg values for 16x250-pm device with respect to 8x125-pm device Jarndala Kompa 2006 . The parasitic resistances Rd and Rs are inversely proportional with the gate width. However this is not the case with Rg which is proportional with the unite-gate-width and inversely proportional with the number of gate fingers as reported in Goyal et al. 1989 . Parameter Wg 16x250 pm Wg 8x250 pm Wg 8x125 pm Wg 2x50 pm Cpga fF Cpgi fF Cg. fF Cgda fF Cgdi fF Cgd fF Cpda fF Cpdi fF 245 Cds fF Lg pH Ld pH Ls pH Rg Q Rd Q Rs Q Ri Q Rgd Q Gm mS T ps Gds mS Ggsf mS Ggdf mS Table 1. Extracted model parameters for different GaN HEMT sizes under cold pinch-off bias condition VDS 0 V and VGS Vpinch-off . 2006 IEEE. Reprinted with permission. Intrinsic parameter extraction After deembedding the extracted extrinsic parameters in Section the bias-dependent intrinsic parameters can be extracted. An efficient technique is developed for extracting of the optimal value of the .