tailieunhanh - báo cáo hóa học:" Growth behavior of titanium dioxide thin films at different precursor temperatures"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth behavior of titanium dioxide thin films at different precursor temperatures | Nanoscale Research Letters SpringerOpen0 This Provisional PDF corresponds to the article as it appeared upon acceptance. Fully formatted PDF and full text HTML versions will be made available soon. Growth behavior of titanium dioxide thin films at different precursor temperatures Nanoscale Research Letters 2012 7 89 doi 1556-276X-7-89 Sang-Hun Nam askaever@ Sang-Jin Cho bluescreen@ Jin-Hyo Boo jhboo@ ISSN 1556-276X Article type Nano Express Submission date 9 September 2011 Acceptance date 26 January 2012 Publication date 26 January 2012 Article URL http content 7 1 89 This peer-reviewed article was published immediately upon acceptance. It can be downloaded printed and distributed freely for any purposes see copyright notice below . Articles in Nanoscale Research Letters are listed in PubMed and archived at PubMed Central. For information about publishing your research in Nanoscale Research Letters go to http authors instructions For information about other SpringerOpen publications go to http 2012 Nam etal. licensee Springer. This is an open access article distributed under the terms of the Creative Commons Attribution License http licenses by which permits unrestricted use distribution and reproduction in any medium provided the original work is properly cited. Growth behavior of titanium dioxide thin films at different precursor temperatures Sang-Hun Nam 1 Sang-Jin Cho1 and Jin-Hyo Boo 1 department of Chemistry and Institute of Basic Science Sungkyunkwan University Suwon 440-746 South Korea Corresponding authors askaever@ jhboo@ Email addresses S-HN askaever@ S-JC bluescreen@ J-HB jhboo@ Abstract The hydrophilic TiO2 films were successfully deposited on slide glass substrates using titanium tetraisopropoxide as a single precursor without carriers or bubbling gases by a metal-organic chemical vapor