tailieunhanh - Báo cáo hóa học: " Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Photoluminescence Study of Low Thermal Budget III–V Nanostructures on Silicon by Droplet Epitaxy | Nanoscale Res Lett 2010 5 1650-1653 DOI s11671-010-9689-8 NANO EXPRESS Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitaxy S. Bietti C. Somaschini E. Sarti N. Koguchi S. Sanguinetti G. Isella D. Chrastina A. Fedorov Received 20 June 2010 Accepted 1 July 2010 Published online 18 July 2010 The Author s 2010. This article is published with open access at Abstract We present of a detailed photoluminescence characterization of high efficiency GaAs AlGaAs quantum nanostructures grown on silicon substrates. The whole process of formation of the GaAs AlGaAs active layer was realized via droplet epitaxy and migration enhanced epitaxy maintaining the growth temperature 350 C thus resulting in a low thermal budget procedure compatible with back-end integration of the fabricated materials on integrated circuits. Keywords Quantum nanostructures III-V semiconductors Si integration Photoluminescence The possibility to integrate opto-electronic and photonic devices based on III-V semiconductors directly on Si-based integrated circuits IC is one of the major research issues of today microelectronics industry 1-6 . Of particular technological interest is the possibility of carrying out the III-V device fabrication as a back-end process that is after the IC has been already realized. In this case strict constraints on thermal budget for growth and processing of the epilayer are imposed by the compatibility with the underlying IC. Integration of III-V materials on silicon is far from being optimized. Several important challenges have to be S. Bietti C. Somaschini E. Sarti N. Koguchi S. Sanguinetti L-NESS and Dipartimento di Scienza dei Materiali Via Cozzi 53 20125 Milano Italy e-mail G. Isella D. Chrastina A. Fedorov CNISM L-NESS and Dipartimento di Fisica del Politecnico di Milano Via Anzani 42 22100 Como Italy overcame in order to obtain high-quality III-V material on Si the .