tailieunhanh - Báo cáo hóa học: " Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes | Nanoscale Res Lett 2010 5 1492-1495 DOI s11671-010-9667-1 NANO EXPRESS Negative Differential Resistance in ZnO Nanowires Bridging Two Metallic Electrodes Yang Zhang Ching-Ting Lee Received 14 May 2010 Accepted 3 June 2010 Published online 13 June 2010 The Author s 2010. This article is published with open access at Abstract The electrical transport through nanoscale contacts of ZnO nanowires bridging the interdigitated Au electrodes shows the negative differential resistance NDR effect. The NDR peaks strongly depend on the starting sweep voltage. The origin of NDR through nanoscale contacts between ZnO nanowires and metal electrodes is the electron charging and discharging of the parasitic capacitor due to the weak contact rather than the conventional resonant tunneling mechanism. Keywords Negative differential resistance ZnO nanowires Electrical transport Introduction In recent years there has been a growing interest in the exploration of the charge transport through nanoscale lowdimensional systems 1 2 . An important phenomenon of electronic transport in low-dimensional systems is the negative differential resistance NDR effect in currentvoltage I V curve 3 4 . This effect can be used in switches and high-frequency oscillators 5 . This phenomenon has been impressively demonstrated in lowdimensional structures 6 7 . Usually this NDR effect can Y. Zhang Institute of Physics for Microsystems and Department of Physics Henan University No. 1 Jinming Road Kaifeng Henan 475004 China e-mail yzhang@ . Lee Institute of Microelectronics Department of Electrical Engineering National Cheng Kung University Tainan 70101 Taiwan be attributed to the intrinsic resonance tunneling experimentally or theoretically 8 9 . The coupling mechanism for NDR in junctions was also proposed 10 . The tunneling current usually depends on the transition in lowdimensional structures or in the interface between the metal electrodes and nanoscale structures 11