tailieunhanh - Báo cáo hóa học: " Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays | Nanoscale Res Lett 2010 5 1822-1828 DOI s11671-010-9719-6 NANO EXPRESS Synthesis and Photoluminescence Properties of Porous Silicon Nanowire Arrays Linhan Lin Siping Guo Xianzhong Sun Jiayou Feng Yan Wang Received 27 May 2010 Accepted 26 July 2010 Published online 5 August 2010 The Author s 2010. This article is published with open access at Abstract Herein we prepare vertical and single crystalline porous silicon nanowires SiNWs via a two-step metal-assisted electroless etching method. The porosity of the nanowires is restricted by etchant concentration etching time and doping lever of the silicon wafer. The diffusion of silver ions could lead to the nucleation of silver nanoparticles on the nanowires and open new etching ways. Like porous silicon PS these porous nanowires also show excellent photoluminescence PL properties. The PL intensity increases with porosity with an enhancement of about 100 times observed in our condition experiments. A red-shift of the PL peak is also found. Further studies prove that the PL spectrum should be decomposed into two elementary PL bands. The peak at 850 nm is the emission of the localized excitation in the nanoporous structure while the 750-nm peak should be attributed to the surface-oxidized nanostructure. It could be confirmed from the Fourier transform infrared spectroscopy analyses. These porous SiNW arrays may be useful as the nanoscale optoelectronic devices. Keywords Porous silicon nanowires Electroless etching Silver catalyst Photoluminescence Porosity L. Lin S. Guo X. Sun J. Feng Department of Materials Science and Engineering Key Lab of Advanced Materials Tsinghua University 100084 Beijing People s Republic of China e-mail fengjy@ Y. Wang Institute of Microelectronics of Tsinghua University 100084 Beijing People s Republic of China Introduction Silicon with nanoscale has received much attention due to its potential applications on electronics photonics nanoscale sensors .

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