tailieunhanh - Báo cáo hóa học: " High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors | Nanoscale Res Lett 2010 5 1795-1799 DOI s11671-010-9714-y NANO EXPRESS High-Temperature Stable Operation of Nanoribbon Field-Effect Transistors Chang-Young Choi Ji-Hoon Lee Jung-Hyuk Koh Jae-Geun Ha Sang-Mo Koo Sangsig Kim Received 29 June 2010 Accepted 19 July 2010 Published online 3 August 2010 The Author s 2010. This article is published with open access at Abstract We experimentally demonstrated that nanoribbon field-effect transistors can be used for stable high-temperature applications. The on-current level of the nanoribbon FETs decreases at elevated temperatures due to the degradation of the electron mobility. We propose two methods of compensating for the variation of the current level with the temperature in the range of 25-150 C involving the application of a suitable 1 positive or 2 negative substrate bias. These two methods were compared by two-dimensional numerical simulations. Although both approaches show constant on-state current saturation characteristics over the proposed temperature range the latter shows an improvement in the off-state control of up to five orders of magnitude X 10-6 . Keywords Field-effect transistors FETs Electron mobility Variation of the current level Nanoribbon FET Introduction The nanoribbon structure has recently been extensively investigated for many applications such as ZnS nanoribbon lasers 1 graphene nanoribbon field-effect transistors GNRFETs 2 nanoribbon sensors in Si 3 and other materials 4 . Nanoribbon structures offer a relatively easy . Choi . Lee . Koh . Ha . Koo College of Electronics and Information Engineering Kwangwoon University Seoul 139-701 Korea e-mail smkoo@ S. Kim Department of Electrical Engineering Korea University Seoul 136-701 Korea system to access control and process due to their relatively larger scale compared to other nanostructures such as nanowires NWs 5 nanodots NDs 6 and nanotubes NTs 7 . Nanoribbons or thin silicon on insulators