tailieunhanh - Báo cáo hóa học: " Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells | Nanoscale Res Lett 2010 5 1762-1767 DOI s11671-010-9707-x NANO EXPRESS Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells Dawei Di Ivan Perez-Wurfl Angus Gentle Dong-Ho Kim Xiaojing Hao Lei Shi Gavin Conibeer Martin A. Green Received 14 June 2010 Accepted 15 July 2010 Published online 1 August 2010 The Author s 2010. This article is published with open access at Abstract As an important step towards the realisation of silicon-based tandem solar cells using silicon quantum dots embedded in a silicon dioxide SiO2 matrix single-junction silicon quantum dot Si QD solar cells on quartz substrates have been fabricated. The total thickness of the solar cell material is 420 nm. The cells contain 4 nm diameter Si quantum dots. The impacts of post-metallisation treatments such as phosphoric acid H3PO4 etching nitrogen N2 gas anneal and forming gas Ar H2 anneal on the cells electrical and photovoltaic properties are investigated. The Si QD solar cells studied in this work have achieved an open circuit voltage of 410 mV after various processes. Parameters extracted from dark I-V light I-V and circular transfer length measurement CTLM suggest limiting mechanism in the Si QD solar cell operation and possible approaches for further improvement. Keywords Silicon Quantum dots Solar cells Third generation Electrical characterisation Introduction The concept of a tandem solar cell has been well developed as a method of improving solar cell efficiency. In a tandem cell solar cells of different band gaps are stacked on top of one another. The cell with the highest band gap is placed on the top while the cell with the lowest band gap is positioned at the bottom of the tandem stack. Each cell D. Di I. Perez-Wurfl A. Gentle . Kim X. Hao L. Shi G. Conibeer M. A. Green ARC Photovoltaics Centre of Excellence University of New South Wales Sydney NSW 2052 Australia e-mail absorbs

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