tailieunhanh - Báo cáo hóa học: " Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy | Nanoscale Res Lett 2010 5 1897-1900 DOI s11671-010-9752-5 SPECIAL ISSUE ARTICLE Growth Interruption Effect on the Fabrication of GaAs Concentric Multiple Rings by Droplet Epitaxy C. Somaschini S. Bietti A. Fedorov N. Koguchi S. Sanguinetti Received 22 July 2010 Accepted 9 August 2010 Published online 21 August 2010 The Author s 2010. This article is published with open access at Abstract We present the molecular beam epitaxy fabrication and optical properties of complex GaAs nanostructures by droplet epitaxy concentric triple quantum rings. A significant difference was found between the volumes of the original droplets and the final GaAs structures. By means of atomic force microscopy and photoluminescence spectroscopy we found that a thin GaAs quantum well-like layer is developed all over the substrate during the growth interruption times caused by the migration of Ga in a low As background. Keywords Molecular beam epitaxy Droplet epitaxy GaAs nanostructures Photoluminescence Introduction The fabrication of semiconductor quantum nanostructures based on self-assembly has deeply attracted the research community because of the interest in fundamental physics and the potential applications of these systems as building blocks for novel devices and quantum information technologies 1-3 . In particular quantum rings a special class of semiconductor nanostructures have been investigated since they manifest a quantum-interference phenomenon known as the Aharonov-Bohm AB effect 4 and have also been applied for the fabrication of optoelectronic C. Somaschini S. Bietti N. Koguchi S. Sanguinetti L-NESS and Dipartimento di Scienza dei Materiali Universita di Milano Bicocca Via Cozzi 53 20125 Milan Italy e-mail A. Fedorov CNISM L-NESS and Dipartimento di Fisica Politecnico di Milano Via Anzani 42 22100 Como Italy devices 5-7 . Therefore the ability in the production of quantum ring systems has a great relevance in the .

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