tailieunhanh - Báo cáo hóa học: " GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 μm operation"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for μm operation | Chaqmaqchee et al. Nanoscale Research Letters 2011 6 104 http content 6 1 104 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for pm operation Faten Adel Ismail Chaqmaqchee 1 Simone Mazzucato1 Murat Oduncuoglu1 2 Naci Balkan1 Yun Sun1 Mustafa Gunes1 Maxime Hugues3 Mark Hopkinson3 Abstract Hot electron light emission and lasing in semiconductor heterostructure Hellish devices are surface emitters the operation of which is based on the longitudinal injection of electrons and holes in the active region. These devices can be designed to be used as vertical cavity surface emitting laser or as in this study as a vertical cavity semiconductor optical amplifier VCSOA . This study investigates the prospects for a Hellish VCSOA based on GaInNAs GaAs material for operation in the wavelength range. Hellish VCSOAs have increased functionality and use undoped distributed Bragg reflectors and this coupled with direct injection into the active region is expected to yield improvements in the gain and bandwidth. The design of the Hellish VCSOA is based on the transfer matrix method and the optical field distribution within the structure where the determination of the position of quantum wells is crucial. A full assessment of Hellish VCSOAs has been performed in a device with eleven layers of GaAs quantum wells QWs in the active region. It was characterised through I-V L-V and by spectral photoluminescence electroluminescence and electro-photoluminescence as a function of temperature and applied bias. Cavity resonance and gain peak curves have been calculated at different temperatures. Good agreement between experimental and theoretical results has been obtained. Introduction III-V semiconductors are indispensable for today s optoelectronic devices such as lasers modulators photodetectors and optical amplifiers in optical fibre