tailieunhanh - Báo cáo hóa học: " Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy"

Tuyển tập báo cáo các nghiên cứu khoa học quốc tế ngành hóa học dành cho các bạn yêu hóa học tham khảo đề tài: Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy | Lo et al. Nanoscale Research Letters 2011 6 102 http content 6 1 102 o Nanoscale Research Letters a SpringerOpen Journal NANO EXPRESS Open Access Magnetotransport in an aluminum thin film on a GaAs substrate grown by molecular beam epitaxy 1 1 2 1 1 2 Shun-Tsung Lo Chiashain Chuang Sheng-Di Lin Kuang Yao Chen Chi-Te Liang Shih-Wei Lin Jau-Yang Wu 2 Mao-Rong Yeh1 Abstract Magnetotransport measurements are performed on an aluminum thin film grown on a GaAs substrate. A crossover from electron- to hole-dominant transport can be inferred from both longitudinal resistivity and Hall resistivity with increasing the perpendicular magnetic field B. Also phenomena of localization effects can be seen at low B. By analyzing the zero-field resistivity as a function of temperature T we show the importance of surface scattering in such a nanoscale film. Introduction Aluminum has found a wide variety of applications in heat sinks for electronic appliances such as transistors and central processing units electrical transmission lines for power distribution and so forth. As a result it is highly desirable to prepare high-quality aluminum materials for practical device applications. In particular the epitaxial growth of Al thin films on GaAs substrates has attracted much interest because of its relevance to the field of electronic interconnects 1 2 . Fundamental limitations on the speed of interconnects are the various scattering processes 3 4 occurring in low-dimensional systems. In order to fully utilize it in the integrated circuits c onsisting of GaAs-based high electron mobility transistors investigations of the scattering mechanism on an Al thin film grown on a GaAs substrate are necessary. One of the most important issues regarding the power dissipation and the speed of the device is the inelastic process such as electron-phonon scattering and electron-electron scattering. It is also important for the illustrations of quantum interference phenomena .