tailieunhanh - Temperature dependence of anharmonic exafs oscillation of crystalline silicon
In this work, the anharmonic extended X-ray absorption fine structure (EXAFS) oscillation of crystalline silicon (c-Si) is presented in terms of the Debye-Waller factor using the cumulant expansion approach up to the fourthorder. The first four EXAFS cumulant has been calculated based on the classical anharmonic correlated Einstein (ACE) model and suitable analysis procedure, in which thermodynamic parameters are derived from the anharmonic effective potential obtained using the first shell near-neighbor contribution approach. The analysis of the temperature dependence of the EXAFS oscillation is performed via evaluating the influence of the cumulants on the amplitude reduction and the phase shift of the anharmonic EXAFS oscillation. |
đang nạp các trang xem trước